| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for preferentially polishing a projection under the control for polishing of a recess and for highly flattening polishing surface with extraordinary small quantity of polishing work, with less dependence on pattern of polishing velocity on the occasion of polishing the surface to be polished of a material layer of the silicon dioxide system during manufacture of a semiconductor integrated circuit device. <P>SOLUTION: In the case where the polishing surface is formed of the material layer of the silicon dioxide system during manufacture of the semiconductor integrated circuit device, a polishing agent including cerium oxide particle, water, gluconic acid and/or gluco-heptonic acid is used as the chemical and mechanical polishing agent for polishing the polishing surface. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
