| 摘要 |
PROBLEM TO BE SOLVED: To improve transmissivity of a light in a thin-film transistor or a thin-film diode as a semiconductor device using an oxide as a semiconductor layer. SOLUTION: The thin-film transistor has a channel layer composed of an oxide semiconductor transparent to visible rays. The thin-film transistor has the channel layer 11 having a refractive index of nx, a gate insulating layer 12 brought into contact with one surface of the channel layer 11, and a transparent layer 16 being brought into contact with the other surface of the channel layer 11 and having the refractive index of nt. The inequality nx>nt holds. The thin-film transistor has: a substrate 10 having the refractive index of no; the transparent layer 16 being arranged on the substrate 10 and having the refractive index of nt; and the channel layer 11 being arranged on the transparent layer 16 and having the refractive index of nx, and also has a relationship of nx>nt>no. COPYRIGHT: (C)2007,JPO&INPIT
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