| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein a connecting capacity between collector/base is changed depending on the magnitude of a voltage between the collector/base, in conventional transistors. SOLUTION: The semiconductor device is provided with: a collector region 9 formed of a first conductive semiconductor; a first depletion layer control region 6 formed of the first conductive semiconductor, whose impurity concentration is higher than that of the collector region 9, on the same layer of collector region 9; a second depletion control region 8 formed of the first conduction type semiconductor, whose impurity concentration is higher than that of the collector region 9, on the lower layer of the collector region 9; and a base region 4 formed of the second conductive semiconductor, having a polarity reverse to that of the first conductive semiconductor, on the surface of the semiconductor collector region 9. In this case, the semiconductor device is provided with a structure, in which a first distance (z) from the side surface of the base region 4 to the side surface of the first depletion layer control region 6 becomes shorter than a second distance (y), from the bottom surface of the base region 4 to the surface of the second depletion layer control region 8. COPYRIGHT: (C)2007,JPO&INPIT
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