| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate having an impurity-doped polycrystalline semiconductor layer having little variation in impurity concentration on an insulation substrate. SOLUTION: The method of manufacturing the semiconductor substrate having a polycrystalline semiconductor layer containing impurities on the surface of the insulation substrate includes: a process of forming an impurity-doped amorphous semiconductor layer which is more highly doped than the polycrystalline semiconductor layer; a process of forming an impurity-doped amorphous semiconductor layer which is more lightly doped than the polycrystalline semiconductor layer, or an impurity-undoped amorphous semiconductor layer; and a process of crystallizing the amorphous semiconductor layers. COPYRIGHT: (C)2007,JPO&INPIT
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