| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method and a baking apparatus which reduce the line edge roughness without changing the pattern dimensions. SOLUTION: The resist pattern forming method executes a baking, exposing, after baking, developing, rinsing and drying steps to form a resist pattern after coating a substrate 11 under process with a chemical sensitization type resist. On baking after exposure, the substrate 11 under process is laid in an atmosphere with an electric field parallel to the surface of the substrate 11, and relatively varying its direction over time. COPYRIGHT: (C)2007,JPO&INPIT
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