发明名称 |
Lateral double-diffused field effect transistor and integrated circuit having same |
摘要 |
In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
|
申请公布号 |
US2007063271(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
US20060509717 |
申请日期 |
2006.08.25 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAKIMOTO TAKAHIRO;NAKAMURA HIROKI;FUKUSHIMA TOSHIHIKO |
分类号 |
H01L29/94;H01L29/76;H01L31/00 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|