| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which is improved in reliability by preventing the nonconforming of NFP caused by the residual strain after mounting to a support base and a crack of the semiconductor laser. SOLUTION: A semiconductor layer 11 is constituted by laminating a buffer layer 12, an n-type cladding layer 13, an n-type light waveguide layer 14, an active layer 15, a p-type light waveguide layer 16, a first p-type cladding layer 17, a p-type etching prevention layer 18, a second p-type cladding layer 19, a p-type interlayer 20, and a p-type cap layer 21 in this order. The second p-type cladding layer 19, the p-type interlayer 20, and the p-type cap layer 21 have laser structure wherein a belt-shaped ridge 23 and a belt-shaped dummy ridge 25 are arranged alternately in the upper part. The ridge 23 has a current injection function to the active layer 15, in the other hand the dummy ridge 25 does not possess a current pouring function to the active layer 15. COPYRIGHT: (C)2007,JPO&INPIT
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