| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a group IV-VI ferromagnetic semiconductor which has a flat crystal surface, an excellent crystallinity, moreover a ferromagnetism, and a high Curie temperature. SOLUTION: A vaccum in a growing chamber of a film manufacturing apparatus is held at a level of 1×10<SP>-8</SP>Torr or less, further, a temperature of a substrate serving as a base is held in a range of 100°C to 400°C, and a supply amount of a vapor deposition material to a crystal growing surface of the group IV-VI compound semiconductor is controlled depending on the vapor deposition material to be used. That is, when a group IV-VI compound, a magnetic element, and a group VI element are used for the vapor deposition material, the supply amount is controlled so that the supply ratio VI/TM of the group VI element (VI) to the magnetic element (TM) to be supplied to the growing chamber is in a range of 0.5 to 5. When a group IV element, the magnetic element, and the group VI element are used for the vapor deposition material; the supply amount is controlled so that a supply ratio VI/(TM+IV) of the group VI element (VI) to the magnetic element (TM) and the group IV element (IV) to be supplied to the growing chamber is in a range of 1 to 6. COPYRIGHT: (C)2007,JPO&INPIT
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