MAGNETORESISTIVE ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive element in which power consumption required for changing a direction of magnetization of a ferromagnetic layer is small, and to provide its manufacturing method. SOLUTION: The manufacturing method of a TMR element 1 contains the joint step of jointing a ferromagnetic layer which serves as a ferromagnetic semiconductor to a (ferroelectric) dielectric layer 10 made of a dielectric or ferroelectric; the dividing step of dividing the ferromagnetic layer into two ferromagnetic layers consisting of a first ferromagnetic layer 20 and a second ferromagnetic layer 40; and the intermediate layer forming step of forming an intermediate layer 30 between the first ferromagnetic layer 20 and the second ferromagnetic layer 40, so that the intermediate layer 30 and the first ferromagnetic layer 20 are mutually jointed to the intermediate layer 30 and the second ferromagnetic layer 40. COPYRIGHT: (C)2007,JPO&INPIT