发明名称 |
FILM DEPOSITION METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method by which a thin film having a high film quality can be manufactured with a high productivity, and also to provide a manufacturing method of a semiconductor device by which a semiconductor device having a good device characteristic can be manufactured with a high productivity. SOLUTION: The film deposition method for depositing a film on a substrate to be treated includes a first process wherein a first film is deposited by ALD method on an insulation layer formed on the substrate to be treated, and a second process wherein a second film is deposited by CVD method uninterruptedly after the first process. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007073637(A) |
申请公布日期 |
2007.03.22 |
申请号 |
JP20050256947 |
申请日期 |
2005.09.05 |
申请人 |
TOKYO ELECTRON LTD;RENESAS TECHNOLOGY CORP |
发明人 |
TAKABA HIROYUKI;NAMATAME TOSHIHIDE;KADOSHIMA MASARU |
分类号 |
H01L21/285;C23C16/18;H01L21/28;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/285 |
代理机构 |
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主权项 |
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地址 |
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