发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING BIT REGISTERING LAYER AND METHOD OF DRIVING THE SAME
摘要 <p>The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the memory cells are defective. The memory layer may be a nanometer-scale memory device, such as a molecular memory, a carbon nanotube memory, an atomic memory, a single electron memory, or a memory fabricated by a chemical bottom-up method, etc.</p>
申请公布号 WO2007032588(A1) 申请公布日期 2007.03.22
申请号 WO2006KR01727 申请日期 2006.05.09
申请人 SAMSUNG ELECTRONICS CO., LTD.;YOON, HONG SIK;YEO, IN SEOK 发明人 YOON, HONG SIK;YEO, IN SEOK
分类号 G11C29/00 主分类号 G11C29/00
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