发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING BIT REGISTERING LAYER AND METHOD OF DRIVING THE SAME |
摘要 |
<p>The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the memory cells are defective. The memory layer may be a nanometer-scale memory device, such as a molecular memory, a carbon nanotube memory, an atomic memory, a single electron memory, or a memory fabricated by a chemical bottom-up method, etc.</p> |
申请公布号 |
WO2007032588(A1) |
申请公布日期 |
2007.03.22 |
申请号 |
WO2006KR01727 |
申请日期 |
2006.05.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;YOON, HONG SIK;YEO, IN SEOK |
发明人 |
YOON, HONG SIK;YEO, IN SEOK |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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