| 摘要 |
There is provided a method for producing a field effect semiconductor device, e.g., a field effect transistor 6 using carbon nanotubes in a channel layer 5 , wherein the method includes the step of subjecting the carbon nanotubes to plasma treatment to change a physical or chemical state of the carbon nanotubes. Thus, there can be provided a method which is advantageous in that the method easily produces a field effect semiconductor device which has a current path, e.g., a channel layer, having carbon nanotubes uniformly dispersed therein, and which is prevented from suffering deterioration of the device characteristics due to the formation of bundles of carbon nanotubes.
|
