| 摘要 |
A solid-state imaging device comprising pixels arranged in a row direction and a column direction, wherein each of the pixels comprises: (i) a light receiving portion including photoelectric converting elements which are formed overlappingly in a depth direction of a semiconductor substrate, and which detect lights of different colors respectively, and a photoelectric converting film which is stacked above the plural photoelectric converting elements, and which detects a light of a color different from the colors detected by the photoelectric converting elements; and (ii) a signal read circuit which reads out signals corresponding to the lights detected by the photoelectric converting elements and the photoelectric converting film, wherein the solid-state imaging device comprises: a first signal processing section which applies a predetermined signal process on signals read out from first signal read circuits in a part of the pixels; and a second signal processing section which applies the predetermined signal process on signals read out from second signal read circuits in pixels other than the part of the pixels.
|
