摘要 |
Into a channel formation region of a semiconductor substrate of p-type silicon, indium ions are implanted at an implantation energy of about 70 keV and a dose of about 5x10<SUP>13</SUP>/cm<SUP>2</SUP>, thereby forming a p-doped channel layer. Next, germanium ions are implanted into the upper portion of the semiconductor substrate at an implantation energy of about 250 keV and a dose of about 1x10<SUP>16</SUP>/cm<SUP>2</SUP>, thereby forming an amorphous layer in a region of the semiconductor substrate deeper than the p-doped channel layer.
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