| 发明名称 |
Semiconductor integrated circuit device with protection capability for protection circuits from static electrical charge |
| 摘要 |
A diode is formed by an N+ diffusion layer and a P-type semiconductor substrate. In an N-well, a diode is formed by a P+ diffusion layer and an N+ diffusion layer. The N+ diffusion layer is connected to power supply wiring. A fuse is connected to the N+ diffusion layer and the P+ diffusion layer.
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| 申请公布号 |
US2007063203(A1) |
申请公布日期 |
2007.03.22 |
| 申请号 |
US20060520643 |
申请日期 |
2006.09.14 |
| 申请人 |
ELPIDA MEMORY, INC. |
发明人 |
HAYASHIDA YOKO |
| 分类号 |
H01L21/82;H01L21/822;H01L27/04;H01L27/06;H01L27/15;H01L29/18;H01L29/267;H01L31/12 |
主分类号 |
H01L21/82 |
| 代理机构 |
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