METHOD FOR FORMING POROUS INSULATING FILM AND SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for forming a porous insulating film by using a cyclic siloxane raw material monomer, which enables to form a low-density film by suppressing separation of hydrocarbons. Specifically disclosed is a method wherein an insulating film is formed through plasma vapor deposition by supplying at least a cyclic organic siloxane raw material (101) into a reaction chamber. A mixed gas composed of the cyclic organic siloxane raw material (101) and a compound raw material (103) containing a part of the chemical structure of the cyclic organic siloxane raw material (101) is used in this method for forming a porous insulating film. The compound raw material (103) is preferably a compound containing a part of a side chain of the the cyclic organic siloxane raw material (101).