发明名称 |
SEMICONDUCTOR PROBE WITH HIGH-RESOLUTION RESISTIVE TIP, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor probe equipped with a high-resolution resistive tip, and to provide a method for manufacturing the same. SOLUTION: The semiconductor probe with the high-resolution resistive tip includes a cantilever in which a first impurity is doped and at the end of which a projecting resistive convex section is formed by doping second impurity, having the polarity differing from that of the first impurity at a low-concentration level; and first and second electrode regions, which are disposed on the both sides of the resistive convex section of the cantilever and in which the second impurity is doped to a high-concentration level. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007071867(A) |
申请公布日期 |
2007.03.22 |
申请号 |
JP20060204978 |
申请日期 |
2006.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO LTD;SEOUL NATIONAL UNIV INDUSTRY FOUNDATION |
发明人 |
JUNG JU-HWAN;KIM JUN-SOO;SHIN HYUNG-CHEOL;HONG SEUNG-BUM |
分类号 |
G01Q60/00;G01Q70/16;G01Q80/00;G01R1/067;G01R1/073;G11B9/14 |
主分类号 |
G01Q60/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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