| 摘要 |
PROBLEM TO BE SOLVED: To provide a small and low-cost varactor which varies in capacity value extending over a wide band. SOLUTION: The varactor comprises a silicon substrate 1, a first well layer 2 which is formed on the silicon substrate and has a conductivity type different from that of the silicon substrate, a second well layer 3 which is formed on the first well layer and has a conductivity type different from that of the first well layer, a gate oxide film 4 formed on the second well layer, and a gate electrode 5 formed on the gate oxide film. The capacity value is variable, according to the potential difference between the gate electrode and second well layer, and further to the potential difference between the second well layer and first well layer. COPYRIGHT: (C)2007,JPO&INPIT
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