| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer on which a high-frequency driven signal processing circuit and a pixel matrix circuit whose transistor characteristic variation due to an optical leak current is suppressed, are formed integrally in a single SOI layer. SOLUTION: An SOI layer 12 formed on an insulating substrate 20 is mechanically polished into a thin film. Grating strain, a grating defect, etc., which operate as a center of carrier rebonding in the SOI layer 12 are removed through a heat treatment. Ar<SP>+</SP>ions are injected from an opening of a mask 50 to introduce a fine grating defect etc., in a desired area in the surface of the SOI layer 12. Such a grating defect itself serves as a center of carrier rebonding, and becomes a macrodefect through a heat treatment in a subsequent device manufacturing stage, so that electric characteristics of a device are degraded to a desired level. Namely, a region (12a) with high electric characteristics and a region (12b) with low electric characteristics are formed in the plane of the single SOI layer 12. COPYRIGHT: (C)2007,JPO&INPIT
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