| 摘要 |
<p>This invention relates to a method of etching a feature in a silicon substrate located in a chamber and having a patterned mask thereon including performing a cyclic etch process through the mask to form the feature, the process including successive etch and deposition steps using etch and deposition gases flowed into the chamber characterised in that the deposition gas is flowed into the chamber continuously throughout a plurality of successive etch and deposition cycles.</p> |
