PROCESS FOR PRODUCING EPITAXIAL WAFER AND EPITAXIAL WAFER PRODUCED THEREFROM

摘要

In a vapor-phase growth apparatus, epitaxial growth is carried out on a wafer having a CVD film on its backside as a monitor wafer for resistance compensation and/or thickness measurement of an epitaxial layer. Epitaxial growth is then carried out on a dummy wafer, or alternatively a vapor-phase growth apparatus is operated under epitaxial growth conditions without use of the wafer. Thereafter, epitaxial growth is carried out on a wafer for a product to produce an epitaxial wafer. The above constitution provides a production process that can effectively prevent heavy metal contamination and can produce a high-quality epitaxial wafer in the production of an epitaxial wafer for use in the production of image pickup devices such as CCD or CMOS image sensors using a CVD film-free wafer.