发明名称 Use ofsilicon block process step to camouflage a false transistor 3-1 OPTICS - PATENTS 28/02/07 22:27:38 PAGE 26 UMBER: 6148 21 MARCH 2007 cations For Patents
摘要 <p>The similarity of non-operable and operable transistors in an integrated circuit is increased by ensuring that the distance between the gate and source or drain electrodes is the same for both types of transistor. The use of non-operable transistors allow the circuit designer to disguise an AND gate so that it appears to be an OR gate to the reverse engineer. The disguised non-operable transistors cause the circuitry to operate in an unexpected manner to the reverse engineer.</p>
申请公布号 GB0702704(D0) 申请公布日期 2007.03.21
申请号 GB20070002704 申请日期 2003.11.20
申请人 HRL LABORATORIES LLC;CHOW, LAP-WAI;RAYTHEON COMPANY;HARBISON, GAVIN J;CLARK, WILLIAM M JR;BAUKUS, JAMES P 发明人
分类号 H01L23/58;H01L27/02 主分类号 H01L23/58
代理机构 代理人
主权项
地址