| 摘要 |
<p>The laser has an active zone with a pn junction enclosed by a first n-doped semiconducting layer and at least one p-doped semiconducting layer, a tunnel contact layer on the p-side of the active zone with an aperture with an aperture diameter and depth and covered by an n-doped current carrying layer (7) with an elevation in the aperture region. A structured layer (8) about the lateral area of the elevation has a thickness selected so its optical thickness is at least equal to that of the current carrying layer near the elevation depth.</p> |
