发明名称 |
FERROELECTRIC MEMORY AND ITS MANUFACTURING METHOD |
摘要 |
<p>A ferroelectric memory includes a substrate and a sheet-shaped device formed over the substrate through an adhesive layer. The sheet-shaped device includes a memory cell array in which a ferroelectric layer is disposed at least in intersecting regions of a plurality of lower electrodes and a plurality of upper electrodes which are formed in the shape of lines, and a peripheral circuit section for the memory cell array. <IMAGE> <IMAGE></p> |
申请公布号 |
EP1548833(A4) |
申请公布日期 |
2007.03.21 |
申请号 |
EP20030788099 |
申请日期 |
2003.08.13 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
NATORI, EIJI;SHIMODA, TATSUYA;KIJIMA, TAKESHI |
分类号 |
H01L25/065;G11C11/22;H01L21/00;H01L21/68;H01L21/84;H01L21/98;H01L23/48;H01L27/105;H01L27/115;H01L27/12;H01L29/76;H01L31/062 |
主分类号 |
H01L25/065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|