| 摘要 |
A multi-wavelength light emitting device and a method for fabricating the same are provided to emit light having various kinds of waveform by forming a concavo-convex part on an interface between a quantum well layer and a quantum barrier layer of an active layer. A buffer layer is formed on a substrate. An n-semiconductor layer having an etched top part is formed on an upper surface of the buffer layer. A first electrode is formed on the etched top part of the n-semiconductor layer. An active layer is formed on the remaining region except for the etched top part of the n-semiconductor layer. The active layer is formed with a stacked structure including a quantum well layer(400) having a plurality of projections and a quantum barrier layer(430). A p-semiconductor layer is formed on the active layer. A second electrode is formed on the p-semiconductor layer.
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