Indium oxide conductive film structures

摘要

One-transistor ferroelectric memory devices using an indium oxide film (In₂O₃), an In₂O₃ film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In₂O₃ film comprises: depositing an In film using a PVD process, typically with a power in the range of 200 to 300 watts; forming a film including In overlying a substrate material; simultaneously (with the formation of the In-including film) heating the substrate material, typically the substrate is heated to a temperature in the range of 20 to 200 degrees C.; following the formation of the In-including film, post-annealing, typically in an O2 atmosphere; and, in response to the post-annealing: forming an In₂O₃ film; and, controlling the resistivity in the In₂O₃ film. For example, the resistivity can be controlled in the range of 260 to 800 ohm-cm.