发明名称 |
Manufacturing method of barrier-forming film |
摘要 |
In manufacturing a barrier-forming film, a vapor-deposited inorganic oxide film is provided on a face of a substrate film. An annealing treatment is applied to the substrate film having said vapor-deposited inorganic film. The substrate film is a resinous film which selected from a group consisting of polyesters, polyamides and polypropylenes. The annealing treatment includes a heating treatment carried out at a temperature within the range from 55° C. to 150° C. in order to cause thermal shrinkage of the substrate film and to increase density of the vapor-deposited inorganic oxide film. The vapor-deposited inorganic oxide film includes a vapor-deposited silicon oxide film or a vapor-deposited aluminum oxide film.
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申请公布号 |
US7192625(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20040785259 |
申请日期 |
2004.02.24 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
OHKAWA KOUJIRO;TSUZUKI ATSUO;YOSHIKATA KUNIAKI |
分类号 |
B32B9/00;C23C16/40;B32B27/32;B32B27/34;B32B27/36;C08J7/06;C23C14/08;C23C14/10;C23C14/24;C23C14/58;C23C16/56 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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