发明名称 |
Amorphous silicon deposition for sequential lateral solidification |
摘要 |
An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from 600 to 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.
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申请公布号 |
US7192627(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20020157199 |
申请日期 |
2002.05.30 |
申请人 |
L.G.PHILLIPS LCD CO., LTD. |
发明人 |
JUNG YUN-HO |
分类号 |
B05D3/00;G02F1/1368;C30B13/00;H01L21/20;H01L21/205;H01L21/268;H01L21/336;H01L29/786 |
主分类号 |
B05D3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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