| 摘要 |
The present invention provides a method for etching a substrate 100 . The method includes conducting a first etch on an anti-reflective layer 170 and a portion of a hardmask layer 140, 150 to form an opening 162 in the substrate 100 . The first etch is designed to be selective to a remaining portion of the hardmask layer 140, 150 . A second etch, which is different from the first etch, is conducted on a remaining portion of the hardmask 140, 150 , and it is designed to be less selective than the first etch to the remaining portion of the hardmask 140, 150 . The first etch allows polymer to build up on the sidewalls of the opening 162 , and the polymer substantially remains on the sidewalls during the second etch.
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