发明名称 |
Semiconductor laser manufacturing method |
摘要 |
A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.
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申请公布号 |
US7192851(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20040931206 |
申请日期 |
2004.09.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMANE KEIJI;UEDA TETSUO;KIDOGUCHI ISAO;KAWATA TOSHIYA |
分类号 |
H01L21/00;H01S5/028;H01L21/26;H01L21/42;H01S5/00;H01S5/02;H01S5/16;H01S5/22;H01S5/223;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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