发明名称 Large-sized substrate and method of producing the same
摘要 A large-sized substrate having a diagonal length of not less than 500 mm and a ratio of flatness/diagonal length of not more than 6.0x10<SUP>-6 </SUP>is disclosed. By use of the large-sized substrate for exposure of the present invention, the exposure accuracy, particularly the register accuracy and resolution are enhanced, so that it is possible to achieve high-precision exposure of a large-sized panel. With the processing method according to the present invention, it is possible to stably obtain a large-sized photomask substrate with a high flatness, and since the CD accuracy (dimensional accuracy) at the time of exposure of the panel is enhanced, it is possible to perform exposure of a fine pattern, leading to a higher yield of the panel. Furthermore, by applying the processing method according to the present invention, it is also possible to create an arbitrary surface shape.
申请公布号 US7191618(B2) 申请公布日期 2007.03.20
申请号 US20030355154 申请日期 2003.01.31
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 SHIBANO YUKIO;MIHARADA SATORU;UEDA SHUHEI;WATABE ATSUSHI;TABATA MASAKI
分类号 B32B17/00;B24B7/00;B24C1/00;C03C19/00;G02F1/1333;G03F1/60;G03F9/00 主分类号 B32B17/00
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