RESISTIVE MEMORY CELL, METHOD FOR FORMING THE SAME AND RESISTIVE MEMORY ARRAY USING THE SAME,申请号KR20050025561-传众专利搜索

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发明名称	RESISTIVE MEMORY CELL, METHOD FOR FORMING THE SAME AND RESISTIVE MEMORY ARRAY USING THE SAME
摘要
申请公布号	KR100697282(B1)	申请公布日期	2007.03.20
申请号	KR20050025561	申请日期	2005.03.28
申请人		发明人
分类号	H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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