发明名称 Semiconductor devices and substrates used in thereof
摘要 A substrate used in a semiconductor device. The substrate includes a first wiring layer, a second wiring layer, and an interconnection-wiring layer. The first wiring layer includes a plurality of first pads, and the second wiring layer includes a plurality of second pads. The interconnection-wiring layer is set between the first and second wiring layer. In this case, at least one of the second pads that does not electrically connect to anyone of the first pads electrically connects to the interconnection-wiring layer. In another case, a shielding portion, which electrically connects the interconnection-wiring layer, is provided around the second pad that doesn't electrically connect to anyone of the first pads. Furthermore, this invention also discloses a semiconductor device including the substrate.
申请公布号 US7193314(B2) 申请公布日期 2007.03.20
申请号 US20030341339 申请日期 2003.01.14
申请人 SILICON INTEGRATED SYSTEMS CORP. 发明人 LIN WEI FENG;WU CHUNG JU;LO WEN-YU;YEN WEN-DONG
分类号 H01L23/485;H01L23/48;H01L23/498;H05K1/02;H05K1/11;H05K3/34 主分类号 H01L23/485
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