发明名称 |
Method of improving the breakdown voltage of a diffused semiconductor junction |
摘要 |
A method is provided for forming a graded junction in a semiconductor material having a first conductivity type. Dopant having a second conductivity type opposite the first conductivity type is introduced into a selected region of the semiconductor material to define a primary dopant region therein. The perimeter of the primary dopant region defines a primary pn junction. While introducing dopant into the selected region of the semiconductor material, dopant is simultaneously introduced into the semiconductor material around the perimeter of the primary dopant region and spaced-apart from the primary pn junction. The dopant in the both the primary dopant region and in the dopant around the perimeter of the primary dopant region is then diffused to provide a graded dopant region. The graded dopant region thus include an interior portion that has a first dopant gradient with a first maximum dopant concentration and a perimeter portion that is contiguous with the interior portion and has a second dopant gradient with a second maximum dopant concentration that is less than the first maximum dopant concentration.
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申请公布号 |
US7192853(B1) |
申请公布日期 |
2007.03.20 |
申请号 |
US20030659421 |
申请日期 |
2003.09.10 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
STRACHAN ANDREW;VASHCHENKO VLADISLAV |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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