发明名称 |
Electroplated CoWP composite structures as copper barrier layers |
摘要 |
A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.
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申请公布号 |
US7193323(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20030714966 |
申请日期 |
2003.11.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;CHIRAS STEFANIE R.;COOPER EMANUEL;DELIGIANNI HARIKLIA;KELLOCK ANDREW J.;RUBINO JUDITH M.;TSAI ROGER Y. |
分类号 |
H01L23/48;B32B15/04;C25D3/56;C25D9/08;H01L21/288;H01L21/44;H01L21/768;H01L23/52;H01L23/532;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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