发明名称 |
Transistor with independent gate structures |
摘要 |
A method of making a transistor with independent gate structures. The gate structures are each adjacent to sidewalls of a semiconductor structure. The method includes depositing at least one conformal layer that includes a layer of gate material over a semiconductor structure that includes the channel region. A planar layer is formed over the wafer. The planar layer has a top surface below the top surface of the rat least one conformal layer at a location over the substrate. The at least one conformal layers are etched to remove the gate material over the semiconductor structure.
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申请公布号 |
US7192876(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20030443375 |
申请日期 |
2003.05.22 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MATHEW LEO;STEIMLE ROBERT F.;MURALIDHAR RAMACHANDRAN |
分类号 |
H01L21/308;G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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