| 发明名称 |
Organic Schottky diode |
| 摘要 |
An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as a buffer between the semiconductor layer and an ohmic contact layer.
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| 申请公布号 |
US7193291(B2) |
申请公布日期 |
2007.03.20 |
| 申请号 |
US20040809135 |
申请日期 |
2004.03.25 |
| 申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
LEE TZU-CHEN;HAASE MICHAEL A.;BAUDE PAUL F. |
| 分类号 |
H01L27/095;H01L29/47;H01L51/00;H01L51/05;H01L51/10;H01L51/30;H01L51/40 |
主分类号 |
H01L27/095 |
| 代理机构 |
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| 主权项 |
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