Unsaturated monomers, polymers, chemically-amplified resist composition, and process of pattern formation

摘要

There is provided a chemically-amplified resist composition having high transparency to light having a wavelength of 220 nanometers or smaller, excellent resistance to etching, and excellent adhesion to a substrate. The chemically-amplified resist composition is prepared through the use of at least one of a repeated structural unit having a bridged alicyclic gamma-lactone structure defined in the general formula (III), a repeated structural unit having a bridged alicyclic gamma-lactone structure defined in the general formula (IV), and a repeated structural unit having a bridged alicyclic gamma-lactone structure defined in the general formula (V).