| 摘要 |
An apparatus and a method for etching an edge of a substrate are provided to control easily a slope of an etched layer at an interface between a center region of a wafer and an edge region in a wafer etching process. A substrate is loaded on a supporting member(100). An etch gas supply member(240) is used for supplying an etch gas from a center region of the substrate loaded on the supporting member to an edge region. A driver(400) is used for rotating the substrate loaded on the supporting member. A slope control member(500) is used for controlling a slope of an etched layer at an interface between the center region and the edge region of the substrate.
|
