| 发明名称 |
METHOD OF PROCESSING A SEMICONDUCTOR WAFER |
| 摘要 |
<p>A method of processing a semiconductor wafer having a large number of rectangular areas sectioned by streets arranged in a lattice form on the front surface, circuits being formed in the respective areas. This method comprises the step of mounting a semiconductor wafer on a protective substrate in such a manner that the front surface of the semiconductor wafer is opposed to one side of the protective substrate having a large number of pores in at least its central area prior to the grinding of the back surface of the semiconductor wafer.</p> |
| 申请公布号 |
SG130020(A1) |
申请公布日期 |
2007.03.20 |
| 申请号 |
SG20030064482 |
申请日期 |
2003.10.30 |
| 申请人 |
DISCO CORPORATION |
发明人 |
YAJIMA KOUICHI;KITAMURA MASAHIKO;NAMIOKA SHINICHI;NANJO MASATOSHI |
| 分类号 |
H01L21/683;H01L21/00;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
