发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
A method for manufacturing a semiconductor device including forming a gate electrode over a substrate; forming a pate insulating film over the pate electrode and over the substrate; forming a semiconductor film on the gate insulating film; providing the semiconductor film with a metal element; crystallizing the semiconductor film provided with the metal element; doping an element which is used for gettering into a portion of the crystallized semiconductor film; and heating the crystallized semiconductor film whereby the metal element contained in a channel region of the semiconductor film is gettered by the portion.
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申请公布号 |
US7192817(B2) |
申请公布日期 |
2007.03.20 |
申请号 |
US20040917359 |
申请日期 |
2004.08.13 |
申请人 |
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发明人 |
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分类号 |
H01L21/84;H01L21/336;H01L21/77;H01L27/12;H01L29/423;H01L29/49 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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