| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device. A minute pattern is formed using a hard mask film of a series of a nitride film as an etch mask. Before a hard mask film removal process is performed, the step of performing given etching using an oxide film etchant is added to remove an abnormal oxide film on the nitride film. It is thus possible to effectively remove the hard mask film. Generation of voids in a pattern below the hard mask film can be also effectively prevented using BOE in which the composition ratio of HF and NH<SUB>4</SUB>F and an etching temperature are optimized as an oxide film etchant.
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| 申请公布号 |
US7192883(B2) |
申请公布日期 |
2007.03.20 |
| 申请号 |
US20040009712 |
申请日期 |
2004.12.13 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LIM TAE JUNG;PARK SANG WOOK |
| 分类号 |
H01L21/461;H01L21/76;C23F1/14;H01L21/302;H01L21/306;H01L21/308;H01L21/311;H01L21/3213;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/461 |
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