发明名称 HIGH-PURITY POWDER SILICON DIOXIDE AND METHOD AND DEVICE FOR PRODUCTION OF SILICON DIOXIDE
摘要 FIELD: production of silicon dioxide. ^ SUBSTANCE: powder silicon dioxide contains admixtures lesser than 500 parts per billion and contains no carbon, preferably content of admixtures is lesser than 150 part per billion: Cu is lesser than 1 part per billion; Fe is lesser than 25 parts per billion; Ni is lesser than 2 parts per billion; Cr is lesser than 2 parts per billion; Ti is lesser than 3 parts per billion; Al is lesser than 31 parts per billion; Ca is lesser than 65 parts per billion; Mg is lesser than 12 parts per billion; Na is lesser than 12 parts per billion; K is lesser than 6 parts per billion and Li is lesser than 1 part per billion. Silicon dioxide is produced by hydrolysis of SiCl4 in flame of device where all contact surfaces do not contain metals. ^ EFFECT: enhanced efficiency of production of high-purity product. ^ 15 cl, 6 dwg, 1 tbl, 7 ex
申请公布号 RU2295492(C2) 申请公布日期 2007.03.20
申请号 RU20040130850 申请日期 2003.03.06
申请人 VAKKER-KHEMI AG. 发明人 KHOL'GER STSILLAT;FRITTS SHVERTFEGER;BERND KHAKK;MARKUS SHEFER
分类号 C01B33/18;C01B39/00;C03B19/10;C03C3/06;C03C12/00 主分类号 C01B33/18
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