发明名称 SOURCE/DRAIN ELECTRODES, THIN-FILM TRANSISTOR SUBSTRATES, MANUFACTURE METHODS THEREOF, AND DISPLAY DEVICES
摘要 <p>A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin- film transistor semiconductor layer through the nitrogen-containing layer.</p>
申请公布号 SG130146(A1) 申请公布日期 2007.03.20
申请号 SG20060054761 申请日期 2006.08.11
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) 发明人 KAWAKAMI NOBUYUKI;KUGIMIYA TOSHIHIRO;GOTOH HIROSHI;TOMIHISA KATSUFUMI;HINO AYA
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