发明名称 |
SOURCE/DRAIN ELECTRODES, THIN-FILM TRANSISTOR SUBSTRATES, MANUFACTURE METHODS THEREOF, AND DISPLAY DEVICES |
摘要 |
<p>A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin- film transistor semiconductor layer through the nitrogen-containing layer.</p> |
申请公布号 |
SG130146(A1) |
申请公布日期 |
2007.03.20 |
申请号 |
SG20060054761 |
申请日期 |
2006.08.11 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) |
发明人 |
KAWAKAMI NOBUYUKI;KUGIMIYA TOSHIHIRO;GOTOH HIROSHI;TOMIHISA KATSUFUMI;HINO AYA |
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