| 摘要 |
A dielectric film of a semiconductor device and a method for forming the same are provided to enhance the capacitance and to improve the integration degree by forming an amorphous alumina layer on a stacked dielectric film. A stacked structure including a first dielectric film(13) and a second dielectric film(15) is formed on a semiconductor substrate, wherein a crystallized HfO2 and ZrO2 layers are used as the first and the second dielectric films. A third dielectric film(17) made of an amorphous alumina layer is formed on the upper or the lower portions of the stacked structure. The first dielectric film has a thickness of 30~100 Š. The second dielectric film has a thickness of 5~100 Š. The third dielectric film has a thickness of 5~50 Š.
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