发明名称 |
PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure. |
申请公布号 |
KR100695888(B1) |
申请公布日期 |
2007.03.19 |
申请号 |
KR20040012358 |
申请日期 |
2004.02.24 |
申请人 |
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发明人 |
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分类号 |
H01L27/115;G11C16/02;H01L27/105;H01L27/24;H01L45/00 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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