发明名称 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME
摘要 <p>A positive resist composition comprises: (A) a resin capable of increasing its solubility in an alkali developer by action of an acid and not containing a silicon atom; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), (X) an alkali-soluble group, (Y) a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer, (Z) a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer; and (D) a solvent.</p>
申请公布号 KR20070030701(A) 申请公布日期 2007.03.16
申请号 KR20060088405 申请日期 2006.09.13
申请人 发明人
分类号 G03F7/039 主分类号 G03F7/039
代理机构 代理人
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