发明名称 Column Decoding Apparatus of Semiconductor Memory
摘要 A column decoding apparatus of a semiconductor memory is provided to reduce operation current of the semiconductor memory by preventing the generation of an unnecessary column select signal. A column decoding apparatus of a semiconductor memory includes a first control signal output unit(231), a second control signal output unit(233), a first driving unit(235), and a second driving unit(237). The first control signal output unit receives a column address enable signal and an up-mat signal and outputs a first control signal. The second control signal output unit receives a column address enable signal and a down-mat signal and outputs a second control signal. The first driving unit outputs an inputted first pre-decoding signal in response to the first control signal. The second driving unit outputs the inputted first pre-decoding signal in response to the second control signal.
申请公布号 KR100695288(B1) 申请公布日期 2007.03.16
申请号 KR20060021230 申请日期 2006.03.07
申请人 发明人
分类号 G11C8/10 主分类号 G11C8/10
代理机构 代理人
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