| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to overcome the limit of channel length due to design rule and to increase cell current by changing the channel direction of a horizontal direction to a vertical direction. An active region has a first recess between surface regions(30b). An isolation layer(22) is surrounded to the active region. A pair of gate lines(27) is intersected on the active region. A portion of the gate line is filled in a second recess(30a). A first junction region(32a) is formed at the active region of the lower of the first recess. A second junction region is formed at the surface region. A vertical channel is formed between the first and the second junction regions.</p> |
