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发明名称
Method for forming the isolation layer of semiconductor device
摘要
申请公布号
KR20070030395(A)
申请公布日期
2007.03.16
申请号
KR20050085017
申请日期
2005.09.13
申请人
发明人
分类号
H01L21/76
主分类号
H01L21/76
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